Abstract
By using the maximum entropy principle (MEP) we present a general theory to obtain a closed set of balance hydrodynamic equations (HD) for hot carriers including the full-band effects with a total energy scheme. Furthermore, under spatially homogeneous conditions, a closed set of balance equations for the fluctuations of these variables is constructed. We analyze, in the linear case, the different coupling processes, as functions of the electric field, with a full set of scalar and vectorial moments. We prove that, for n-type Si, the coupling between the different moments can lead to a strongly non-exponential decay of the corresponding response functions. To check the validity of this theoretical approach numerical HD calculations are found to compare well with those obtained by an ensemble Monte Carlo (MC) simulator.
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Trovato, M. (2005). Hydrodynamic calculation for extended differential mobility in semiconductors. In: Rionero, S., Romano, G. (eds) Trends and Applications of Mathematics to Mechanics. Springer, Milano . https://doi.org/10.1007/88-470-0354-7_20
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DOI: https://doi.org/10.1007/88-470-0354-7_20
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