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Nanosystems Design and Technology pp 23–44Cite as

Materials and Devices for Nanoelectronic Systems Beyond Ultimately Scaled CMOS

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Abstract

In this chapter, we review some of the most recent results in these areas and put them in a unified context that covers a very wide range, from materials to system design. The first section presents a top-down silicon nanowire fabrication platform for high-mobility gate-all-around (GAA) MOSFETs and impact-ionization devices. Ferroelectric FET with sub-100-nm copolymer P(VDF-TrFE) gate dielectric are examined in the next section for nonvolatile memory applications, which is a very promising direction toward future high-density memory arrays, followed by a discussion of materials for piezoelectric nanodevices in the last section.

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Authors and Affiliations

  1. Microelectronic Systems Lab, EPFL – Swiss Federal Institute of Technology, 1015, Lausanne, Switzerland

    Didier Bouvet, László Forró, Adrian M. Ionescu, Prof. Dr. Yusuf Leblebici, Arnaud Magrez, Kirsten E. Moselund, Giovanni A. Salvatore, Nava Setter & Igor Stolitchnov

Authors
  1. Didier Bouvet
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  2. László Forró
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  3. Adrian M. Ionescu
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  4. Prof. Dr. Yusuf Leblebici
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  5. Arnaud Magrez
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  6. Kirsten E. Moselund
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  7. Giovanni A. Salvatore
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  8. Nava Setter
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  9. Igor Stolitchnov
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Corresponding author

Correspondence to Yusuf Leblebici .

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Bouvet, D. et al. (2009). Materials and Devices for Nanoelectronic Systems Beyond Ultimately Scaled CMOS. In: Nanosystems Design and Technology. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-0255-9_2

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  • DOI: https://doi.org/10.1007/978-1-4419-0255-9_2

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  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4419-0254-2

  • Online ISBN: 978-1-4419-0255-9

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