Elsevier

Optical Materials

Volume 35, Issue 11, September 2013, Pages 2018-2022
Optical Materials

Er and Cu codoped SiO2 films obtained by sputtering deposition: Enhancement of the rare earth emission at 1.54 μm mediated by metal sensitizers

https://doi.org/10.1016/j.optmat.2012.09.036Get rights and content

Abstract

The modification of the Er3+ emission properties by means of the interaction with metallic species is the object of this paper. In particular, this research has evidenced the enhancement of the characteristic Er ion emission at 1.54 μm after copper incorporation in Er-doped SiO2 films deposited by RF magnetron sputtering. Metal sensitizer nature was studied by evaluating the impact of the sputtering deposition conditions, together with during- and post-deposition energetic treatments, on the structural and optical properties of the synthesized films. Since the rare earth sensitization occurrence is strictly dependent on the metal clustering state, the reported results suggest that 1.54 μm PL enhancement is achieved after copper incorporation, but preventing the formation of crystalline clusters with size larger than 1 nm. Concerning the mechanism involved in the sensitization process, it is argued that this phenomenon is due to an energy transfer process mediated by Cu-related sensitizers, that can be photostimulated even at frequencies non-resonant with the Er absorption lines in the visible range. The comparison of the estimated Er ion excitation cross section between the Er-doped and the Er and Cu codoped systems has revealed a real enhancement of this parameter when the Cu-mediated sensitization occurs.

Highlights

PL properties of Er ion doped silica films are improved after Cu ion incorporation. ► 1.54 μm Er PL emission increase is due to a Cu-mediated sensitization mechanism. ► Er ions can be excited via Cu sensitizers with enhanced excitation cross section.

Introduction

The realization of highly performing light sources and optical amplifiers in planar waveguide is a crucial point for the development of the integrated optoelectronic and lightwave communication technology. In this field, rare earth based dielectrics find large application and, in particular, Er-doped glasses are one of the reference materials for the realization of optical amplifiers operating at the standard telecommunication wavelength in the near-IR window [1], [2], [3]. Anyway the possible use in planar photonic devices requires amplifiers providing an adequate optical gain, even considering the reduced size of the system [4].

One of the major limitations for the Er-doped glasses is the small absorption cross section for direct excitation of the rare earth ion. In the case of devices based on external optical pumping, a possible way to enhance the Er optical response is given by the so-called sensitization effect [5]. This consists in coupling the rare earth ion network to a suitable sensitizing agent, which act as light antenna being photostimulated even at frequencies non-resonant with the characteristic Er ion absorption lines. Subsequent energy transfer process to the rare earth brings it to relax part of this indirect excitation through radiative emission at 1.54 μm. The result is an overall enhancement in the photon capture efficiency of the system mediated by the sensitizer. This phenomenon has been observed in Er–based glasses codoped with other elements, such as rare earth ions [6], [7], Si nanostructures [8], [9], [10] or clusters of noble metals, like Ag [11], [12], [13], [14] and Au [15], [16], [17].

Following the research that our group has developed on both the themes of Er-doped dielectric waveguides [18], [19], [20], [21] and metal nanocluster composite glasses (MNCGs) [22], [23], [24], we have checked the possibility to modify and eventually to improve the luminescence response of Er-doped silica film through copper incorporation [25]. As also shown for other noble metal elements [26], [27], [28], [29], copper exhibits optical activity in the visible range when in ionic or aggregate form [30], [31], [32], [33]. This might point out the occurrence of a possible interaction with the rare earth ions, like energy transfer mechanism after suitable Cu-related antenna excitation.

A simple way to prepare Er-doped silica film consists in using sputtering deposition starting from solid targets [18], [19], [20]. This technique allows both the synthesis of glassy layers with well-controlled compositional and structural properties, and the incorporation of a huge variety of possible doping elements. During and post-synthesis treatments play a crucial role for the resulting film microstructure and the optical response activation for the doping elements. These treatments include substrate heating and low-energy ion bombardment together with post-synthesis annealing in conventional oven.

Our study has evidenced that, choosing appropriate synthesis conditions, it is possible to achieve an enhancement of the Er luminescence response when codoping the silica host with copper. As a manifest fingerprint for the occurrence of an energy transfer process, the sensitization effect is associated to the opening of an indirect excitation path mediated by the sensitizer agent with possible Er ion photostimulation even at wavelengths not directly absorbed by the rare earth itself [25]. Since this implies a modification of the photophysics involved in the overall Er luminescence process, we paid particular attention on the analysis and the determination of the parameters characterizing the optical properties of our doped silica films. In this regard, here we discuss the results concerning the evaluation of the Er ion excitation cross section, based on a simplified model for treating the experimental data. The values obtained for the Er and Cu codoped system show a manifest increase of the cross section, as a consequence of the sensitization mechanism.

Section snippets

Experimental

For this study, doped silica films of about 0.5 μm were deposited by multisource RF magnetron sputtering on fused silica slabs. The 13.56 MHz radiofrequency sources worked in a neutral atmosphere of pure Ar at a pressure of 0.40 Pa, and the power was set at 4, 12 and 150 W for copper, erbia and silica targets, respectively. During the 75 min deposition, the sample holder was rotated at 5 rpm to have a good homogeneity of film composition and thickness. Afterwards, a 15 min single silica deposition was

Impact of Cu codoping on Er ion PL properties

Fig. 1 reports the erbium near-IR PL spectra associated to the 4I13/24I15/2 Er ion transition for some of the synthesized films. The spectra in the left panel of Fig. 1 result from pumping in–resonance condition, whereas the ones in the right panel are obtained non-resonantly.

For the Er-doped system, the as-deposited film exhibits poor luminescence properties and a high temperature annealing is always needed to fully activate the 1.54 μm emission (only by resonant excitation). By increasing

Conclusions

In this work we discussed the possibility to enhance the characteristic Er ion emission at 1.54 μm by the interaction with Cu related sensitizers. The system object of this study was constituted by silica film obtained by sputtering deposition, where Er and Cu ions are incorporated in the glassy host as doping elements. Additional during and post-synthesis energetic treatments play a crucial role giving the possibility to optimize the Er3+ emission yield and to control the Cu clustering

Acknowledgements

The authors thank dr. Jasper Rikkert Plaisier of the MCX beamline (Elettra synchrotron light source, Basovizza (Trieste), Italy) for his help during grazing incidence XRD measurements.

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