Maximum-entropy principle for static and dynamic high-field transport in semiconductors

M. Trovato and L. Reggiani
Phys. Rev. B 73, 245209 – Published 15 June 2006

Abstract

Within the maximum entropy principle we present a general theory able to provide, in a dynamical context, the macroscopic relevant variables for carrier transport under electric fields of arbitrary strength. For the macroscopic variables the linearized maximum entropy approach is developed including full-band effects within a total energy scheme. Under spatially homogeneous conditions, we construct a closed set of hydrodynamic equations for the small-signal (dynamic) response of the macroscopic variables. The coupling between the driving field and the energy dissipation is analyzed quantitatively by using an arbitrary number of moments of the distribution function. The theoretical approach is applied to nSi at 300K and is validated by comparing numerical calculations with ensemble Monte Carlo simulations and with experimental data.

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  • Received 20 October 2005

DOI:https://doi.org/10.1103/PhysRevB.73.245209

©2006 American Physical Society

Authors & Affiliations

M. Trovato1 and L. Reggiani2

  • 1Dipartimento di Matematica, Università di Catania, Viale A. Doria, 95125 Catania, Italy
  • 2Dipartimento di Ingegneria dell’ Innovazione e Nanotechnology National Laboratory of CNR-INFM, Università di Lecce, Via Arnesano s/n, 73100 Lecce, Italy

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Vol. 73, Iss. 24 — 15 June 2006

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