Abstract
Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none of these structures were fully integrated on silicon wafers and using a MOSFET fabrication process. We present for the first time the integration of a PVDF-TrFE (70%-30%) layer into a standard n-MOS transistor through a quasi-standard semiconductor technology. This allows us to achieve a Non Volatile Memory cell and at the same time to compact capacitor-transistor ferroelectric cell into a one-transistor memory cell.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
Explore related subjects
Discover the latest articles and news from researchers in related subjects, suggested using machine learning.References
T. Furukawa et al., J. Appl. Phys., vol. 56, no. 5, Sep. 1984.
S. H. Lim et al., J. Appl. Phys. v. 96, no.10 (2004).
A. Gerber et al., J. Appl. Phys. v. 100 024110 (2006)
T. J. Reece et al., Appl. Phys. Lett. V. 82, no.1 (2003).
R. C. G. Naber et al., Nature Material, v. 4 n.3 (2005).
T. Sakoda, et al., Jpn. J. Appl. Phys., Part 1 40, 2911 (2001).
K. Kim et al., 2005 IEEE Symposium on VLSI Technology, (2005).
S. Fujisaki and H Ishiwara, Applied Phys. Letts. 90, 162902 (2007).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Giovanni, A.S., Bouvet, D., Mihai, A.I. et al. 1T Memory Cell Based on PVDF-TrFE Field Effect Transistor. MRS Online Proceedings Library 1067, 10670302 (2007). https://doi.org/10.1557/PROC-1067-B03-02
Received:
Accepted:
Published:
DOI: https://doi.org/10.1557/PROC-1067-B03-02